Ka-band low noise amplifiers based on InAlN/GaN technologies
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/7269172/7288529/07288577.pdf?arnumber=7288577
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
2. Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications;ECS Journal of Solid State Science and Technology;2023-07-01
3. 25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications;IEEE Microwave and Wireless Technology Letters;2023-01
4. A Transformed-based Ka-band GaN Low-Noise Amplifier MMIC;2022 IEEE MTT-S International Wireless Symposium (IWS);2022-08-12
5. Next Generation Phased Arrays for Deep Space Communications;2022 IEEE Aerospace Conference (AERO);2022-03-05
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