25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications

Author:

Ahn Hyun Bae1,Ji Hong-Gu2,Choi Yunho2,Lee Sanghun3ORCID,Kang Dong Min2,Han Junghwan1ORCID

Affiliation:

1. Department of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South Korea

2. ICT Creative Research Laboratory, Electronics and Telecommunication Research Institute, Daejeon, South Korea

3. Wavepia Incorporated, Hwaseong-si, South Korea

Funder

Chungnam National University

Institute for Information and communications Technology Planning (IITP) grant funded by the Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Reference19 articles.

1. 10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100 nm GaN/Si process;gasmi;Proc IEEE Compound Semiconductor Integr Circuit Symp (CSICS),2017

2. Ka-band low noise amplifiers based on InAlN/GaN technologies

3. Microwave and RF Design: Networks, Volume 3

4. Highly robust X-band LNA with extremely short recovery time

5. A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology

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1. A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology;Science China Information Sciences;2023-12-18

2. A Sub-1dB Noise Figure Ku Band GaN Low Noise Amplifier for Space Applications;2023 International Conference on Microelectronics (ICM);2023-12-17

3. Role of inserting an InGaN strain release interlayer in AlGaN growth;Results in Physics;2023-08

4. An MMIC LNA for Millimeter-Wave Radar and 5G Applications with GaN-on-SiC Technology;Sensors;2023-07-22

5. Design and Simulation of Low Noise Amplifier for Sub-6GHz 5G Application;2023 International Conference on Smart Systems for applications in Electrical Sciences (ICSSES);2023-07-07

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