A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology

Author:

Li Huiyang,Xu Jinxu,Zhang Xiuyin

Publisher

Springer Science and Business Media LLC

Subject

General Computer Science

Reference5 articles.

1. Ahn H B, Ji H G, Choi Y, et al. 25–31 GHz GaN-based LNA MMIC employing hybrid-matching topology for 5G base station applications. IEEE Microw Wireless Tech Lett, 2023, 33: 47–50

2. Resca D, Scappaviva F, Florian C, et al. A robust Ku-band low noise amplifier using an industrial 0.25-µm Al-GaN/GaN on SiC process. In: Proceedings of European Microwave Conference, Nuremberg, 2013. 1467–1470

3. Guo F Q, Yao Z H. Design of a Ku-band AlGaN/GaN low noise amplifier. In: Proceedings of the 3rd Asia-Pacific Conference on Antennas and Propagation, Harbin, 2014. 1406–1408

4. Gao L, Rebeiz G M. A 24–43 GHz LNA with 3.1–3.7 dB noise figure and embedded 3-pole elliptic high-pass response for 5G applications in 22 nm FDSOI. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Boston, 2019. 239–242

5. Li H Y, Xu J X, Gao L, et al. 24–35 GHz filtering LNA and filtering switch using compact mixed magnetic-electric coupling circuit in 28-nm bulk CMOS. IEEE Trans Circ Syst I, 2023, 70: 1071–1082

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