25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications-Reference-Cited by-同舟云学术

25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications

Published:2023-01 Issue:1 Volume:33 Page:47-50
ISSN:2771-9588
Container-title:IEEE Microwave and Wireless Technology Letters
language:
Short-container-title:IEEE Microw. Wireless Tech. Lett.

Author:

Ahn Hyun Bae¹,Ji Hong-Gu²,Choi Yunho²,Lee Sanghun³^ORCID,Kang Dong Min²,Han Junghwan¹^ORCID

Affiliation:

1. Department of Radio and Information Communication Engineering, Chungnam National University, Daejeon, South Korea

2. ICT Creative Research Laboratory, Electronics and Telecommunication Research Institute, Daejeon, South Korea

3. Wavepia Incorporated, Hwaseong-si, South Korea

Funder

Chungnam National University

Institute for Information and communications Technology Planning (IITP) grant funded by the Ministry of Science and ICT

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/9944983/9991260/09873896.pdf?arnumber=9873896

Reference19 articles.

1. 10W power amplifier and 3W transmit/receive module with 3 dB NF in Ka band using a 100 nm GaN/Si process;gasmi;Proc IEEE Compound Semiconductor Integr Circuit Symp (CSICS),2017

2. Ka-band low noise amplifiers based on InAlN/GaN technologies

3. Microwave and RF Design: Networks, Volume 3

4. Highly robust X-band LNA with extremely short recovery time

5. A Ka-Band Low-Noise Amplifier for Space Applications in a 100 nm GaN on Si technology

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