GaN Low Noise Amplifier at 8~15 GHz Frequency
Author:
Funder
Ministry of Science and ICT, South Korea
Publisher
Korean Institute of Electromagnetic Engineering and Science
Link
http://jkiees.org/download/download_pdf?doi=10.5515/KJKIEES.2024.35.3.200
Reference4 articles.
1. J. H. Han, J. G. Kim, “A S/C/X-band GaN low noise amplifier MMIC,” The Journal of Korean Institute of Electromagnetic Engineering and Science, vol. 28, no. 5, pp. 430-433, May 2017. 10.5515/KJKIEES.2017.28.5.430
2. C. Andrei, R. Doerner, O. Bengtsson, S. A. Chevtchenko, W. Heinrich, and M. Rudolph, “Highly linear X-band GaN-based low-noise amplifier,” in 2012 International Symposium on Signals, Systems, and Electronics, Potsdam, Oct. 2012. 10.1109/ISSSE.2012.6374314 22339687
3. D. Kim, D. H. Lee, S. Sim, L. Jeon, and S. Hong, “An X-Ku band distributed GaN LNA MMIC with high gain,” Journal of Semiconductor Technology and Science, vol. 14, no. 6, pp. 818-823, Dec. 2014. 10.5573/JSTS.2014.14.6.818
4. H. Li, J. Xu, and X. Zhang, “A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology,” Science China Information Sciences, vol. 67, pp. 119404, Dec. 2023. 10.1007/s11432-023-3849-x
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