Novel Device Design for High-Power InGaN/Sapphire LEDs Using Copper Heat Spreader With Reflector-Reference-Cited by-同舟云学术

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Novel Device Design for High-Power InGaN/Sapphire LEDs Using Copper Heat Spreader With Reflector

Published:2009-07 Issue:4 Volume:15 Page:1281-1286
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Ray-Hua Horng ,Hsiang-Yun Hsiao ,Cheng-Chung Chiang ,Dong-Sing Wuu ,Yu-Li Tsai ,Heng-I Lin

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/5191271/04797867.pdf?arnumber=4797867

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate;Crystals;2020-07-16

3. Novel thin-GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light;Nanoscale Research Letters;2015-04-15

4. Fabrication of GaN-Based White Light-Emitting Diodes on Yttrium Aluminum Garnet-Polydimethylsiloxane Flexible Substrates;Advances in Materials Science and Engineering;2015

5. Thermal management for high-power photonic crystal light emitting diodes;Microelectronics Reliability;2014-01

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