Effects of Carrier Relaxation and Homogeneous Broadening on Dynamic and Modulation Behavior of Self-Assembled Quantum-Dot Laser-Reference-Cited by-同舟云学术

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Effects of Carrier Relaxation and Homogeneous Broadening on Dynamic and Modulation Behavior of Self-Assembled Quantum-Dot Laser

Published:2011-09 Issue:5 Volume:17 Page:1153-1157
ISSN:1077-260X
Container-title:IEEE Journal of Selected Topics in Quantum Electronics
language:
Short-container-title:IEEE J. Select. Topics Quantum Electron.

Author:

Yavari M. H.,Ahmadi V.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx5/2944/6033133/05735155.pdf?arnumber=5735155

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling Electronic and Optical Properties of InAs/InP Quantum Dots;Photonics;2024-08-10

2. Modeling of Relative Intensity Noise in QD-VCSEL;Journal of Lightwave Technology;2022-06-15

3. The Effect of Cavity Length on Two-State Quantum Dot Laser Performance;2022 30th International Conference on Electrical Engineering (ICEE);2022-05-17

4. Lasing Management Using Exceptional Points in Mutually-Coupled Quantum Dot Lasers;IEEE Journal of Quantum Electronics;2022-04

5. Quantum-dot semiconductor lasers with prominent relative intensity noise and spectral characteristics;Optics Express;2021-03-17

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