Modeling of Relative Intensity Noise in QD-VCSEL
Author:
Affiliation:
1. Optoelectronic Lab, Lorestan University, Khorramabad, Iran
2. Department of Electrical and Computer Engineering, Lorestan University, Khorram-Abad, Iran
3. Faculty of Engineering, Shahed University, Tehran, Iran
Funder
Iran National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx7/50/9787682/09716763.pdf?arnumber=9716763
Reference49 articles.
1. Optically Injection-Locked Mid-IR Quantum-Cascade Lasers: The Output-Power-Modulation-Bandwidth-Noise Trilogy
2. Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB
3. Long-Wavelength High-Contrast Grating Vertical-Cavity Surface-Emitting Laser
4. Self-Consistent Analysis of Carrier Confinement and Output Power in 1.3-$\mu{\hbox {m}}$ InAs–GaAs Quantum-Dot VCSELs
5. Analysis of QD VCSEL Dynamic Characteristics Considering Homogeneous and Inhomogeneous Broadening
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3. Theoretical analysis of relative intensity noise in semiconductor QD lasers;Journal of Computational Electronics;2023-05-26
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