The Effect of Cavity Length on Two-State Quantum Dot Laser Performance
Author:
Affiliation:
1. Lorestan University Khorramabad,Optoelectronic Lab,Iran
2. University of Tabriz,Department of Electrical and Computer Engineering,Tabriz,Iran
3. Shahid Rajaee Teacher Training University,Faculty of Electrical Engineering,Tehran,Iran
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9826875/9827000/09827034.pdf?arnumber=9827034
Reference29 articles.
1. Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices
2. Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection
3. Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer
4. Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection
5. Effect of phonon bottleneck on quantum-dot laser performance
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