Improving Realistic Worst-Case Performance of NVCiM DNN Accelerators Through Training with Right-Censored Gaussian Noise
Author:
Affiliation:
1. Uuiversity of Notre Dame
2. North Carolina State University
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10323590/10323543/10323830.pdf?arnumber=10323830
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5. Beol compatible dual-gate ultra thin-body w-doped indium-oxide transistor with ion=370?a/?m, ss= 73mv/dec and ion/ioff ratio¿ 4 × 109;chakraborty;2020 IEEE Symposium on VLSI Technology,2020
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