Author:
Zhang Shiyong,Zheng Penghui,Xu Jianxing,Wang Rong,Huang Yang,Tong Xiaodong
Cited by
8 articles.
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1. Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications;Engineering Research Express;2024-04-24
2. A Wideband Millimeter-Wave GaN Low-Noise Amplifier Using Multi-Stage Feedback Compensation;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13
3. On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
4. A 23 – 32 GHz LNA with Near 5 W Power Handling Capability Using 180 nm GaN HEMT Technology;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
5. The Copernicus Imaging Microwave Radiometer (CIMR): Radio Frequency Interference Mitigation;IGARSS 2023 - 2023 IEEE International Geoscience and Remote Sensing Symposium;2023-07-16