A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling
Author:
Affiliation:
1. Ultra-Low Power Research Center, Huazhong University of Science and Technology, Wuhan, China
2. R&D Department, Top-AI Semiconductor Company Ltd., Wuhan, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/43/10604458/10439970.pdf?arnumber=10439970
Reference31 articles.
1. Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory
2. A Variation-Tolerant Sub-200 mV 6-T Subthreshold SRAM
3. An 8T-SRAM for Variability Tolerance and Low-Voltage Operation in High-Performance Caches
4. A Single-Ended Disturb-Free 9T Subthreshold SRAM With Cross-Point Data-Aware Write Word-Line Structure, Negative Bit-Line, and Adaptive Read Operation Timing Tracing
5. 40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist
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