Low Leakage Single Bitline 9 T (SB9T) Static Random Access Memory
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference37 articles.
1. Confronting the Variability Issues Affecting the Performance of Next Generation SRAM Design to Optimize and Predict the Speed and Yield;Rad;IEEE Access,2014
2. Digital Integrated Circuits: A Design Perspective.;Rabaey,2003
3. A 40 nm 512 kb Cross-Point 8T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist;Lien;IEEE Trans. on Circuits and Systems-I: regular papers,2014
4. A Comprehensive Comparison of Data Stability Enhancement Techniques with Novel Nanoscale SRAM Cells Under Parameter Fluctuations;Hong Zhu;IEEE Trans. on Circuits and Systems-I: regular papers,2014
5. [Online]. Available:〈http://www.itrs.net/Links/2011ITRS/Home2011.htm〉.
Cited by 53 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Low-Power Variation-Tolerant 7T SRAM With Enhanced Read Sensing Margin for Voltage Scaling;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2024-08
2. A low power static noise margin enhanced reliable 8 T SRAM cell;Microsystem Technologies;2024-04-20
3. Design of power efficient and reliable hybrid inverter approach based 11 T SRAM design using GNRFET technology;AEU - International Journal of Electronics and Communications;2024-04
4. A 7T high stable and low power SRAM cell design using QG-SNS FinFET;AEU - International Journal of Electronics and Communications;2023-08
5. Design of 2-1 Multiplexer based high-speed, Two-Stage 90 nm Carry Select Adder for fast arithmetic units;Microprocessors and Microsystems;2023-06
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3