Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell-Reference-Cited by-同舟云学术

Design of Ultracompact Content Addressable Memory Exploiting 1T-1MTJ Cell

Published:2023-05 Issue:5 Volume:42 Page:1450-1462
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Zhuo Cheng¹^ORCID,Yang Zeyu¹^ORCID,Ni Kai²^ORCID,Imani Mohsen³,Luo Yuxuan⁴^ORCID,Wang Shaodi⁵,Zhang Deming⁶^ORCID,Yin Xunzhao⁷^ORCID

Affiliation:

1. College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China

2. Department of Electrical and Microelectronic Engineering, Rochester Institute of Technology, Rochester, NY, USA

3. Department of Computer Science, University of California at Irvine, Irvine, CA, USA

4. School of Micronanotelectronics, Zhejiang University, Hangzhou, China

5. Witmem Company Ltd., Beijing, China

6. Fert Beijing Research Institute, School of Electronics and Information Engineering, Beihang University, Beijing, China

7. College of ISEE, Zhejiang University, Hangzhou, China

Funder

National Key Research and Development Program of China

Zhejiang Provincial Key Research and Development Program

NSF

NSFC

Zhejiang Lab

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

Reference55 articles.

2. Variation-tolerant non-volatile ternary content addressable memory with magnetic tunnel junction;cho;J Semicond Technol Sci,2017

4. 1Mb 0.41 ?m 2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing;li;Proc Symp VLSI Technol,2013

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