A Novel Approach for Doping Two-Dimensional MOS<sub>2</sub> Materials: ZNO Polar Interfacial Charge Transfer Method-Reference-Cited by-同舟云学术

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A Novel Approach for Doping Two-Dimensional MOS₂ Materials: ZNO Polar Interfacial Charge Transfer Method

Published:2024-03-17 Issue: Volume:593 Page:1-3
ISSN:
Container-title:2024 Conference of Science and Technology for Integrated Circuits (CSTIC)
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Author:

Xu Lijun¹,Zhan Guohui¹,Luo Kun¹,Shi Yukun¹,Liu Jiangtao²,Wu Zhenhua¹

Affiliation:

1. Institute of Microelectronics,Chinese Academy of Science,Beijing,China,100029

2. School of Physics and Mechatronic Engineering, Guizhou Minzu University,Guiyang,China,550025

Funder

NSFC

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10531806/10531771/10532108.pdf?arnumber=10532108

Reference17 articles.

1. Ultralow contact resistance between semimetal and monolayer semiconductors

2. Approaching the quantum limit in two-dimensional semiconductor contacts

3. Reexamination of the Schottky Barrier Heights in Monolayer MoS2 Field-Effect Transistors

4. Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions

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