SiC Power Device Evolution Opening a New Era in Power Electronics-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

SiC Power Device Evolution Opening a New Era in Power Electronics

Published:2019-06 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)
language:
Short-container-title:

Author:

Ino Kazuhide,Miura Mineo,Nakano Yuki,Aketa Masatoshi,Kawamoto Noriaki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8746071/8753821/08754464.pdf?arnumber=8754464

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-07

2. A Half-bridge Evaluation Board for Prototyping Power Converters using Sillicon Carbide (SiC) Switching Devices;2024 4th International Conference on Smart Grid and Renewable Energy (SGRE);2024-01-08

3. Advanced Power Converters and Learning in Diverse Robotic Innovation: A Review;Energies;2023-10-19

4. Terrestrial neutron induced failure rate measurement of SiC MOSFETs using China spallation neutron source;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-07

5. Mono-Energetic Proton Induced Damages in SiC Power MOSFETs;IEEE Transactions on Device and Materials Reliability;2023-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP