Terrestrial neutron induced failure rate measurement of SiC MOSFETs using China spallation neutron source-Reference-Cited by-同舟云学术

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Terrestrial neutron induced failure rate measurement of SiC MOSFETs using China spallation neutron source

Published:2023-07 Issue: Volume:540 Page:129-135
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Peng Chao^ORCID,Lei Zhifeng,Zhang Zhangang,He Yujuan,Ma Teng,Huang Yun

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference28 articles.

1. Terrestrial cosmic ray intensities;Ziegler;IBM J. Res. Dev.,1998

2. Effect of cosmic rays on computer memories;Ziegler;Science,1979

3. Single event burnout of high-power diodes;Maier;Nucl. Instr. Meth. Phys. Res. B,1998

4. Cosmic ray neutron-induced single-event burnout in power devices;Shoji;IET Power Electronics,2015

5. Sensitive volume and triggering criteria of SEB in classic planar VDMOS;Luu;IEEE Trans. Nucl. Sci.,2010

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