Cosmic ray neutron‐induced single‐event burnout in power devices

Author:

Shoji Tomoyuki12,Nishida Shuichi3,Hamada Kimimori3,Tadano Hiroshi2

Affiliation:

1. Toyota Central R&D Labs., Inc.NagakuteAichiJapan

2. Graduate School of Pure and Applied SciencesUniversity of TsukubaTsukubaIbarakiJapan

3. Toyota Motor CorporationToyotaAichiJapan

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Trade-off Mechanism Between Reliability and Performance for Data-flow Soft Error Detection;Journal of Electronic Testing;2023-11-02

2. Terrestrial neutron induced failure rate measurement of SiC MOSFETs using China spallation neutron source;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2023-07

3. Mono-Energetic Proton Induced Damages in SiC Power MOSFETs;IEEE Transactions on Device and Materials Reliability;2023-03

4. Single-event burnout hardening of RC-IGBT with the raised N-buffer layer;Microelectronics Reliability;2022-12

5. Investigation and improvement of single-event burn-out in 4H-SiC trench insulated gate bipolar transistors;Results in Physics;2021-10

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