A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization-Reference-Cited by-同舟云学术

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A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization

Published:2016-11 Issue:11 Volume:63 Page:4226-4232
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Karumuri Naveen^ORCID,Dutta Gourab^ORCID,DasGupta Nandita,DasGupta Amitava

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7592488/07565614.pdf?arnumber=7565614

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling approaches for GaN HEMTs;GaN Transistor Modeling for RF and Power Electronics;2024

2. An accurate method to extract thermal resistance of GaN-on-Si HEMTs;Applied Physics Letters;2023-05-22

3. Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs;IEEE Transactions on Electron Devices;2023-03

4. Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

5. Extraction and Optimization of Compact Drain Current Model Parameters for GaN High‐Electron‐Mobility Transistors;physica status solidi (a);2023-01-05

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