Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified
Author:
Affiliation:
1. Elmore Family School of Electrical and Computer Engineering, Purdue University,West Lafayette,IN,United States,47906
2. Indian Institute of Technology,Department of Electrical Engineering,Madras, Chennai,India,600036
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10118187.pdf?arnumber=10118187
Reference29 articles.
1. Self-Heating and Reliability-Aware “Intrinsic” Safe Operating Area of Wide Bandgap Semiconductors—An Analytical Approach
2. Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs
3. A new framework of physics-based compact model predicts reliability of self-heated modern ICs: FinFET, NWFET, NSHFET comparison
4. Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications
5. A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
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