Extraction and Optimization of Compact Drain Current Model Parameters for GaN High‐Electron‐Mobility Transistors-Reference-Cited by-同舟云学术

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Extraction and Optimization of Compact Drain Current Model Parameters for GaN High‐Electron‐Mobility Transistors

Published:2023-01-05 Issue: Volume: Page:2200495
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Physica Status Solidi (a)

Author:

Ganguly Pratik¹^ORCID,Chakravorty Anjan¹,DasGupta Nandita¹,DasGupta Amitava¹

Affiliation:

1. Department of Electrical Engineering Microelectronics and MEMS Laboratory Indian Institute of Technology Madras Chennai 600036 India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.202200495

Reference12 articles.

1. Capacitance–Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

2. Characterization and modeling of 2DEG mobility in AlGaN/AlN/GaN MIS-HEMT

3. Effects of recess depths on performance of AlGaN/GaN power MIS-HEMTs on the Si substrates and threshold voltage model of different recess depths for the using HfO2 gate insulator

4. A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization

5. An Algorithm for Least-Squares Estimation of Nonlinear Parameters

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