Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination-Reference-Cited by-同舟云学术

Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

Published:2016-09 Issue:9 Volume:63 Page:3451-3458
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hu Jie^ORCID,Stoffels Steve,Lenci Silvia,De Jaeger Brice,Ronchi Nicolo,Tallarico Andrea Natale,Wellekens Dirk,You Shuzhen,Bakeroot Benoit,Groeseneken Guido,Decoutere Stefaan

Funder

Electronic Component Systems for European Leadership Joint Undertaking

European Union’s Horizon 2020 research and innovation programme and Austria, Belgium, Germany, Italy, Slovakia, Spain, United Kingdom, Netherlands

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://ieeexplore.ieee.org/iel7/16/7548080/07517385.pdf

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