Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering-Reference-Cited by-同舟云学术

Optimization of Forward and Reverse Electrical Characteristics of GaN-on-Si Schottky Barrier Diode Through Ladder-Shaped Hybrid Anode Engineering

Published:2022-12 Issue:12 Volume:69 Page:6644-6649
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Chih Yi¹^ORCID,Wu Jia Hong²,Chung Chin Han¹^ORCID,You Jhan Yi³,Yu Tzu Chieh⁴,Ma Cheng Jun¹,Lee Ching Ting⁵^ORCID,Ueda Daisuke¹,Hsu Heng Tung¹^ORCID,Chang Edward Yi⁶

Affiliation:

1. Department of International College of Semiconductor Technology (ICST), National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Department of International College of Semiconductor Technology (ICST) and the Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

3. Department of Science in Photonic System, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

4. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

5. Department of Electrical Engineering Program C, Yuan Ze University, Taoyuan, Taiwan

6. Department of Materials Science and Engineering, International College of Semiconductor Technology (ICST), National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09945903.pdf?arnumber=9945903

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5. Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes