AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer-Reference-Cited by-同舟云学术

AlGaN/GaN Schottky Barrier Diodes on Free-Standing GaN Substrates With a Si Doped Barrier Layer

Published:2022 Issue: Volume:10 Page:318-323
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Pu Taofei¹^ORCID,Wang Hsiang-Chun¹,Hsueh Kuang-Po²,Chiu Hsien-Chin²^ORCID,Liu Xinke³^ORCID

Affiliation:

1. College of Materials Science and Engineering, Shenzhen University–Hanshan Normal University Postdoctoral Workstation, Shenzhen University, Shenzhen, China

2. Department of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan

3. College of Materials Science and Engineering, Shenzhen University, Shenzhen, China

Funder

National Natural Science Foundation of China

Key-Area Research and Development Program of Guangdong Province

Guangdong Science Foundation for Distinguished Young Scholars

Science and Technology Foundation of Shenzhen

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9714452/09751041.pdf?arnumber=9751041

Reference24 articles.

1. 2.07-kV AlGaN/GaN Schottky Barrier Diodes on Silicon With High Baliga’s Figure-of-Merit

2. Current transport mechanism of AlGaN/GaN Schottky barrier diode with fully recessed Schottky anode

3. Statistical Analysis of the Impact of Anode Recess on the Electrical Characteristics of AlGaN/GaN Schottky Diodes With Gated Edge Termination

4. Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma;ha;Appl Phys Lett,2012

5. Temperature sensor using thermally stable TiN anode GaN Schottky barrier diode for high power device application

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