Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients-Reference-Cited by-同舟云学术

Extreme Anisotropic Dispersion and One-Dimensional Confined Electrons in 2-D SiP₂ FETs With High Transmission Coefficients

Published:2023-03 Issue:3 Volume:70 Page:1330-1337
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Jialin¹,Zhou Wenhan¹^ORCID,Chen Chuyao¹,Zhang Jingwen¹,Qu Hengze¹^ORCID,Ji Yuxi²,Tao Li²^ORCID,Wu Zhenhua³^ORCID,Zeng Haibo¹^ORCID,Zhang Shengli¹^ORCID

Affiliation:

1. College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, China

2. Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing, China

3. Key Laboratory of Microelectronics Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

Funder

Training Program of the Major Research Plan of the National Natural Science Foundation of China

Jiangsu Funding Program for Excellent Postdoctoral Talent

China Post-Doctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10005229.pdf?arnumber=10005229

Reference59 articles.

1. First-Principles Simulations of FETs Based on Two-Dimensional InSe

2. Fundamental limits in digital information processing

3. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

4. 2D Semiconductor FETs—Projections and Design for Sub-10 nm VLSI

5. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

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