High-Performance and Low-Power <i>p</i>-Channel Transistors Based on Monolayer Be<sub>2</sub>C-Reference-Cited by-同舟云学术

High-Performance and Low-Power p-Channel Transistors Based on Monolayer Be₂C

Published:2023-11-08 Issue:46 Volume:15 Page:53644-53650
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Guo Xinwei¹,Hu Xuemin²,Zhang Shuyu¹,Yang Jialin¹,Chen Chuyao¹,Zhang Jingwen¹,Qu Hengze¹^ORCID,Zhang Shengli¹^ORCID,Zhou Wenhan¹^ORCID

Affiliation:

1. MIIT Key Laboratory of Advanced Display Materials and Devices, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, P. R. China

2. School of Material Engineering, Jinling Institute of Technology, Nanjing 211169, P. R. China

Funder

Qinglan Project of Jiangsu Province of China

Natural Science Foundation of Jiangsu Province

Six Talent Peaks Project in Jiangsu Province

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c09470

Reference38 articles.

1. Recent progress in 2D group-VA semiconductors: from theory to experiment

2. Electronics based on two-dimensional materials

3. Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

4. Uncovering the Anisotropic Electronic Structure of 2D Group VA-VA Monolayers for Quantum Transport

5. Two-dimensional materials and their prospects in transistor electronics

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