A New Charge-Based Analytical Model for the Gate Current in GaN HEMTs
Author:
Affiliation:
1. Department of Electrical Engineering, Indian Institute of Technology, Kanpur, India
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9741401/09718036.pdf?arnumber=9718036
Reference16 articles.
1. Charge-Based Compact Model of Gate Leakage Current for AlInN/GaN and AlGaN/GaN HEMTs
2. A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages
3. Analytical Models for the 2DEG Density, AlGaN Layer Carrier Density, and Drain Current for AlGaN/GaN HEMTs
4. Current transport mechanisms;rhoderick;Metal-Semiconductor Contacts,1988
5. MIS diode and charge-coupled devices;sze;Physics of Semiconductor Devices,1981
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2. Implementation of a Current Linear Regulator Based on a GaN HEMT for Laser Diode Manipulations;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22
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