Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors-Reference-Cited by-同舟云学术

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Elucidation of the Density of States for Polycrystalline Silicon Vertical Thin-Film Transistors

Published:2022-06 Issue:6 Volume:69 Page:3175-3180
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhang Peng¹^ORCID,Jacques Emmanuel²^ORCID,Rogel Regis²,Pichon Laurent²^ORCID,Bonnaud Olivier²

Affiliation:

1. College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

2. Département OASIS (Organic and Silicon Systems), Institut d'Electronique et des Technologies du numéRique, Université de Rennes 1, Rennes, France

Funder

Natural Science Foundation of Jiangsu Province

NUPTSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9780469/09763056.pdf?arnumber=9763056

Reference18 articles.

1. Quasi-vertical multi-tooth thin film transistors based on low-temperature technology (T⩽600°C)

2. P-type and N-type multi-gate polycrystalline silicon vertical thin film transistors based on low-temperature technology

3. Effect of the active layer thickness on the leakage current in p+p p+ accumulation polycrystalline silicon TFTs

4. A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

5. Contact resistance and threshold voltage extraction in n-channel organic thin film transistors on plastic substrates

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Four-terminal polycrystalline-silicon vertical thin-film transistors on glass substrates;Japanese Journal of Applied Physics;2024-04-01

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