Effect of the active layer thickness on the leakage current in p+p p+ accumulation polycrystalline silicon TFTs
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference16 articles.
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2. Characterization of the polysilicon thin film transistors elaborated in high and low temperature processes. Study of the density of traps;Synthetic Metals;1997-11
3. The analysis of the leakage current of polycrystalline silicon thin-film transistors as a function of active layer thickness;Materials Chemistry and Physics;1995-11
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