3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure-Reference-Cited by-同舟云学术

3-D Simulation Study of a Normally-OFF GaN Lateral Multi-Channel JFET With Optimized Electrical Field Transfer Terminal Structure

Published:2022-04 Issue:4 Volume:69 Page:1918-1923
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Guo Hui¹^ORCID,Bai Haineng¹,Zhang Zi-Hui²^ORCID,Xie Zili¹,Chen Dunjun¹^ORCID,Lu Hai¹^ORCID,Zhang Rong¹,Zheng Youdou¹

Affiliation:

1. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. State Key Laboratory of Reliability and Intelligence of Electrical Equipment, Hebei University of Technology, Tianjin, China

Funder

National Natural Science Foundation of China

Natural Science Alliance Foundation

State Key Research and Development Project of Jiangsu

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09729970.pdf?arnumber=9729970

Reference38 articles.

1. High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT

2. Novel Homogenization Field Technology in Lateral Power Devices

3. Superjunction Power Devices, History, Development, and Future Prospects

4. SiC/Si heterojunction VDMOS breaking silicon limit by breakdown point transfer technology

5. Lateral GaN JFET Devices on Large Area Engineered Substrates

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