A Two-Dimensional Model for the Field-Plate Design of High-Voltage Transistor
Author:
Affiliation:
1. Vanguard International Semiconductor Corporation, Hsinchu, Taiwan
2. Richtek Technology, Zhubei City, Hsinchu, Taiwan
3. Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9901396/09893738.pdf?arnumber=9893738
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5. A Study of LDMOS BV Improvement by Gate Architecture Optimization
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