A 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements
Author:
Affiliation:
1. Graduate School of Engineering, Tohoku University, Sendai, Japan
2. Fujikin Inc., Osaka, Japan
3. New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan
Funder
New Energy and Industrial Technology Development Organization
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9780469/09760040.pdf?arnumber=9760040
Reference29 articles.
1. An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor
2. A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor
3. An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration
4. A $2.2~\mu\text{m}$ stacked back side illuminated voltage domain global shutter CMOS image sensor;park;IEDM Tech Dig,2019
5. A 2.1e? temporal noise and ?105 dB parasitic light sensitivity backside-illuminated $2.3~\mu\text{m}$ -pixel voltage-domain global shutter CMOS image sensor using high-capacity DRAM capacitor technology;lee;IEEE ISSCC Dig Tech Papers,2020
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1. [Invited Paper] A High SNR Global Shutter CMOS Image Sensor Technology for High Precision Absorption Imaging Applications;ITE Transactions on Media Technology and Applications;2024
2. A high dynamic range pixel using lateral overflow integration capacitor and adaptive feedback structure in CMOS image sensors;Optoelectronics Letters;2023-12
3. Visualization and Analysis of Temporal and Steady-State Gas Concentration in Process Chamber Using 70-dB SNR 1000 fps Absorption Imaging System;IEEE Transactions on Semiconductor Manufacturing;2023-11
4. In Situ Measurement and Analysis of Low Pressure Gas Concentration Distribution Using 70-dB SNR 1,000 Frame-Per-Second Absorption Imaging System;2022 International Symposium on Semiconductor Manufacturing (ISSM);2022-12-12
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