A 70-dB SNR High-Speed Global Shutter CMOS Image Sensor for in Situ Fluid Concentration Distribution Measurements

Author:

Oikawa Tetsu1ORCID,Kuroda Rihito1ORCID,Takahashi Keigo1,Shiba Yoshinobu2,Fujihara Yasuyuki1ORCID,Shike Hiroya1ORCID,Murata Maasa1ORCID,Kuo Chia-Chi1ORCID,Silva Yhang Ricardo Sipauba Carvalho da1,Goto Tetsuya3ORCID,Suwa Tomoyuki3,Morimoto Tatsuo3,Shirai Yasuyuki3,Inada Takafumi2,Sakai Yushi2,Nagase Masaaki2,Ikeda Nobukazu2,Sugawa Shigetoshi3

Affiliation:

1. Graduate School of Engineering, Tohoku University, Sendai, Japan

2. Fujikin Inc., Osaka, Japan

3. New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan

Funder

New Energy and Industrial Technology Development Organization

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

2. A High Near-Infrared Sensitivity Over 70-dB SNR CMOS Image Sensor With Lateral Overflow Integration Trench Capacitor

3. An over 1Mfps global shutter CMOS image sensor with 480 frame storage using vertical analog memory integration

4. A $2.2~\mu\text{m}$ stacked back side illuminated voltage domain global shutter CMOS image sensor;park;IEDM Tech Dig,2019

5. A 2.1e? temporal noise and ?105 dB parasitic light sensitivity backside-illuminated $2.3~\mu\text{m}$ -pixel voltage-domain global shutter CMOS image sensor using high-capacity DRAM capacitor technology;lee;IEEE ISSCC Dig Tech Papers,2020

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