Effect of C₄₄H₃₀N₄O₄ Surface Modification on the Performance of Al<sub>0.6</sub>Ga<sub>0.4</sub>N MSM Photodetectors-Reference-Cited by-同舟云学术

Effect of C₄₄H₃₀N₄O₄ Surface Modification on the Performance of Al_0.6Ga_0.4N MSM Photodetectors

Published:2022-08 Issue:8 Volume:69 Page:4337-4341
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Xie Feng¹^ORCID,Li Yuhang²,Liu Yushen³,Yang Xifeng³,Zhang Xiumei²,Yang Guofeng²^ORCID

Affiliation:

1. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei, China

2. Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, School of Science, Jiangnan University, Wuxi, China

3. Suzhou Key Laboratory of Advanced Lighting and Display Technologies, School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, China

Funder

National Natural Science Foundation of China

Key Research and Development Program of Jiangsu Province

Natural Science Foundation of Jiangsu Province

Fundamental Research Funds for Central Universities

Science and Technology Program of Suzhou

Science and Technology Development Foundation of Wuxi

Postgraduate Research and Practice Innovation Program of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials