GaN-Based Metal–Semiconductor–Metal Ultraviolet Photodetectors with the ZrO2Insulating Layer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference27 articles.
1. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
2. Solid-State Light Sources Getting Smart
3. GaN Metal–Semiconductor–Metal Photodetectors With SiN/GaN Nucleation Layer
4. The effect of the intrinsic layer on the reliability of nitride-based p–i–n photodetectors
5. AlGaN ultraviolet metal-semiconductor-metal photodetectors grown on Si substrates
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3. Status and Outlook of Metal–Inorganic Semiconductor–Metal Photodetectors;Laser & Photonics Reviews;2020-12-03
4. Role of ZrO 2 Passivation Layer Thickness in the Fabrication of High‐Responsivity GaN Ultraviolet Photodetectors;physica status solidi (RRL) – Rapid Research Letters;2019-06-25
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