2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe<sup>3+</sup> Detection-Reference-Cited by-同舟云学术

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

Published:2023 Issue: Volume:11 Page:518-523
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Gu Yan¹^ORCID,Jiang Xuecheng¹,Lu Naiyan¹,Guo Jiarui¹,Liu Yushen²,Yang Xifeng²,Qian Weiying¹,Zhang Xiangyang¹,Chen Guoqing¹,Tao Tao³^ORCID,Yang Guofeng¹^ORCID

Affiliation:

1. School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, China

2. College of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, China

3. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

Funder

National Natural Science Foundation of China

Key Research and Development Program of Jiangsu Province

Suzhou Science and Technology Project

Fundamental Research Funds for Central Universities

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/10049274/10253674.pdf?arnumber=10253674

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5. Detection of heavy metal ions using meander gated GaN HEMT sensor