Methods for Extracting the Temperature- and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies-Reference-Cited by-同舟云学术

Methods for Extracting the Temperature- and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies

Published:2022-08 Issue:8 Volume:69 Page:4064-4074
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Muller Markus¹^ORCID,d'Alessandro Vincenzo²^ORCID,Falk Sophia¹,Weimer Christoph¹^ORCID,Jin Xiaodi¹^ORCID,Krattenmacher Mario¹^ORCID,Kuthe Pascal³^ORCID,Claus Martin⁴^ORCID,Schroter Michael¹

Affiliation:

1. Chair for Electron Devices and Integrated Circuits, Dresden University of Technology (TU Dresden), Dresden, Germany

2. Department of Electrical Engineering and Information Technologies, University of Naples Federico II, Naples, Italy

3. SemiMod GmbH, Dresden, Germany

4. Infineon Technologies AG, Neubiberg, Germany

Funder

German National Science Foundation [Deutsche Forschungsgemeinschaft (DFG)]

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09827966.pdf?arnumber=9827966

Reference38 articles.

1. Experimental method to thermally deembed pads from R/sub TH/ measurements

2. Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs

3. SiGe HBT Technology: Future Trends and TCAD-Based Roadmap

4. Methods for Determining the Emitter Resistance in SiGe HBTs: A Review and an Evaluation Across Technology Generations

5. Theory of Electrothermal Behavior of Bipolar Transistors: Part I—Single-Finger Devices

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2. Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11

3. Characterization and Compact Modeling of the Thermal Resistance of SiGe HBTs From Cryogenic to Room Temperature;IEEE Transactions on Electron Devices;2023-09

4. A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based Approaches;Electronics;2023-08-16

5. RF Reliability of SiGe and InP HBTs: A Comparative Study;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11