Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs
Author:
Funder
German National Science Foundation
Defense Advanced Research Projects Agency (DARPA)
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9682201/9682202/09682487.pdf?arnumber=9682487
Reference22 articles.
1. Analysis of Carrier Transport in Short-Channel MOSFETs
2. 1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices
3. Generalized Scharfetter–Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
4. A review of hydrodynamic and energy-transport models for semiconductor device simulation
5. Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling
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1. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
2. Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part I: Simulation Tools and Application to Sample Structures;IEEE Transactions on Electron Devices;2023-10
3. Device modeling tools and their application to SiGe HBT development;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16
4. Methods for Extracting the Temperature- and Power-Dependent Thermal Resistance for SiGe and III-V HBTs From DC Measurements: A Review and Comparison Across Technologies;IEEE Transactions on Electron Devices;2022-08
5. DMT-core: A Python Toolkit for Semiconductor Device Engineers;Journal of Open Source Software;2022-07-04
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