Device modeling tools and their application to SiGe HBT development
Author:
Affiliation:
1. TU Dresden,Chair for Electron Devices and Integrated Circuits (CEDIC),Germany,01062
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051729.pdf?arnumber=10051729
Reference45 articles.
1. Deterministic Solvers for the Boltzmann Transport Equation
2. Analysis of the Transistor Tetrode-Based Determination of the Base Resistance Components of Bipolar Transistors—A Review
3. Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon
4. Methods for Determining the Collector Series Resistance in SiGe HBTs—A Review and Evaluation Across Different Technologies
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1. A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space;Journal of Computational Electronics;2024-01-16
2. Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
3. Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
4. Physical Modeling of InP/InGaAs DHBTs With Augmented Drift-Diffusion and Boltzmann Transport Equation Solvers—Part II: Application and Results;IEEE Transactions on Electron Devices;2023-10
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