Improvement of Electrical Performance in Solution-Processed InZnO Thin-Film Transistor With a Radio Frequency O<sub>2</sub> Triggered Multistacked Architecture-Reference-Cited by-同舟云学术

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Improvement of Electrical Performance in Solution-Processed InZnO Thin-Film Transistor With a Radio Frequency O₂ Triggered Multistacked Architecture

Published:2022-08 Issue:8 Volume:69 Page:4277-4282
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shan Fei¹^ORCID,Lee Jae-Yun¹,Sun Hao-Zhou¹,Zhao Han-Lin¹,Wang Xiao-Lin¹,Kim Sung-Jin¹^ORCID

Affiliation:

1. College of Electrical and Computer Engineering, Chungbuk National University, Cheongju, Korea

Funder

Ministry of Science and ICT (MSIT), Korea, under the Grand Information Technology Research Center

Institute for Information & communications Technology Planning & Evaluation

Basic Science Research Program through the National Research Foundation of Korea

Ministry of Education

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09794461.pdf?arnumber=9794461

Reference22 articles.

1. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors

2. Solution-Processed Indium-Zinc Oxide Transparent Thin-Film Transistors

3. Investigating addition effect of hafnium in InZnO thin film transistors using a solution process

4. Review of solution-processed oxide thin-film transistors

5. Amorphous IZO-based transparent thin film transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aqueous solution-processed In2O3 TFTs using focused plasma in gas mixtures;Applied Surface Science;2024-10

2. Solution Process-Based Thickness Engineering of InZnO Semiconductors for Oxide Thin-Film Transistors with High Performance and Stability;Micromachines;2024-01-27

3. Intermittent O₂ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors;IEEE Transactions on Electron Devices;2023-08

4. Heterojunction Channel Engineering in Performance Enhancement of Solution-Processed Oxide Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-06

5. Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance;Materials;2022-09-29

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