In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT-Reference-Cited by-同舟云学术

In-Memory Computing Paradigms by Exploiting the Intrinsic Interactions Between STT and SOT

Published:2022-12 Issue:12 Volume:69 Page:6769-6775
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Feng Jiagao¹^ORCID,Wang Bi¹^ORCID,Hou Zhengyi¹,Wang Chao²^ORCID,Wang Zhaohao¹^ORCID,Zhao Weisheng¹^ORCID

Affiliation:

1. MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Fert Beijing Institute, Beihang University, Beijing, China

2. School of Electronics and Information Engineering, Fert Beijing Research Institute, Beihang University, Beijing, China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9967813/09951597.pdf?arnumber=9951597

Reference34 articles.

1. Field-free and sub-ns magnetization switching of magnetic tunnel junctions by combining spin-transfer torque and spin–orbit torque

2. A spin–orbit torque switching scheme with collinear magnetic easy axis and current configuration

3. First demonstration of interface-enhanced SAF enabling 400 °C-robust 42 nm p-SOT-MTJ cells with STT-assisted field-free switching and composite channels;tsou;Symp VLSI Technol Dig Tech Papers,2021

4. CMOS Compatible Process Integration of SOT-MRAM with Heavy-Metal Bi-Layer Bottom Electrode and 10ns Field-Free SOT Switching with STT Assist

5. Developments in voltage-controlled subnanosecond magnetization switching

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic Time-Domain Sensing Scheme for Spin-Orbit Torque MRAM;IEEE Transactions on Electron Devices;2024-07

2. A High Throughput In-MRAM-Computing Scheme Using Hybrid p-SOT-MTJ/GAA-CNTFET;IEEE Transactions on Circuits and Systems I: Regular Papers;2024-02