A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)-Reference-Cited by-同舟云学术

A Functional Novel Logic for Max/Min Computing in One-Transistor-One-Resistor Devices With Resistive Random Access Memory (RRAM)

Published:2022-04 Issue:4 Volume:69 Page:1811-1815
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Huang Wei-Chen¹,Chen Po-Hsun²^ORCID,Chang Ting-Chang³^ORCID,Zheng Hao-Xuan¹,Yeh Yu-Hsuan¹,Wu Chung-Wei¹,Tan Yung-Fang⁴,Lin Shih-Kai⁵,Wu Pei-Yu⁴,Sze Simon. M.⁶

Affiliation:

1. Department of Physics, National Sun Yat-sen University, Kaohsiung, Taiwan

2. Department of Applied Science, Republic of China Naval Academy, Kaohsiung, Taiwan

3. Department of Physics and the Center of Crystal Research, National Sun Yat-sen University, Kaohsiung, Taiwan

4. Department of Materials and Optoelectronic Science, National Sun Yat-sen University, Kaohsiung, Taiwan

5. Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan

6. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan

Funder

Ministry of Science and Technology (MOST) Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9741401/09723444.pdf?arnumber=9723444

Reference29 articles.

1. Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

2. Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar

3. Logic operation‐based Design for Testability method and parallel test algorithm for 1T1R crossbar

4. In‐Memory Hamming Weight Calculation in a 1T1R Memristive Array

5. In-Memory Digital Comparator Based on a Single Multivalued One-Transistor-One-Resistor Memristor

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