A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation-Reference-Cited by-同舟云学术

A Highly Compact Nonvolatile Ternary Content Addressable Memory (TCAM) With Ultralow Power and 200-ps Search Operation

Published:2022-08 Issue:8 Volume:69 Page:4259-4264
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xianggao¹^ORCID,Qu Yiming¹,Yang Fan¹,Zhao Liang¹,Lee Choonghyun¹^ORCID,Zhao Yi¹^ORCID

Affiliation:

1. College of Electronic Engineering and Information Science, Zhejiang University, Hangzhou, China

Funder

National Key Research and Development Program of China

Key Research and Development Program of Zhejiang Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09802888.pdf?arnumber=9802888

Reference22 articles.

1. 1 Mb 0.41 µm² 2T-2R Cell Nonvolatile TCAM With Two-Bit Encoding and Clocked Self-Referenced Sensing

2. First demonstration of BEOL-compatible ferroelectric TCAM featuring ?-IGZO Fe-TFTs with large memory window of 2.9 V, scaled channel length of 40 nm, and high endurance of 10? cycles;sun;Proc Symp VLSI Technol,2021

3. FeCAM: A Universal Compact Digital and Analog Content Addressable Memory Using Ferroelectric

4. Lifelong Learning with Monolithic 3D Ferroelectric Ternary Content-Addressable Memory

5. Ferroelectric ternary content-addressable memory for one-shot learning

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