Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions-Reference-Cited by-同舟云学术

Experimental demonstration of combination-encoding content-addressable memory of 0.75 bits per switch utilizing Hf–Zr–O ferroelectric tunnel junctions

Published:2024 Issue:14 Volume:11 Page:3307-3315
ISSN:2051-6347
Container-title:Materials Horizons
language:en
Short-container-title:Mater. Horiz.

Author:

Nguyen Manh-Cuong¹,You Jiwon²,Sim Yonguk³,Choi Rino¹,Jeong Doo Seok⁴³^ORCID,Kwon Daewoong²³

Affiliation:

1. Department of Materials Science and Engineering 3-D Convergence Center, Inha University, Incheon 22212, Korea

2. Department of Electronic Engineering, Hanyang University, Seoul 04763, Korea

3. Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea

4. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea

Abstract

We have fabricated 4-CECAM (with keys encoded into 8-long binary arrays and 8 FTJs) with a content density of 0.75 bits per switch, which highlights 50% increase in content density compared to that of the conventional TCAM (0.5 bits per switch).

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/MH/D3MH02218H

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