Computationally Efficient Region-Wise Potential- Based Extremely Closed-Form Analytical Modeling of B/N Substitution Doped GFETs-Reference-Cited by-同舟云学术

Computationally Efficient Region-Wise Potential- Based Extremely Closed-Form Analytical Modeling of B/N Substitution Doped GFETs

Published:2022-08 Issue:8 Volume:69 Page:4708-4716
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chandrasekar L.¹^ORCID,Pradhan K. P.¹^ORCID

Affiliation:

1. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Design and Manufacturing (IIITDM) at Kancheepuram, Chennai, India

Funder

Science and Engineering Research Board

Start-Up Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9839401/09826819.pdf?arnumber=9826819

Reference22 articles.

1. A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

2. Self-Consistent Modeling of B or N Substitution Doped Bottom Gated Graphene FET With Nonzero Bandgap

3. Carrier Density and Quantum Capacitance Model for Doped Graphene

4. Enhancing linearity in I–V characteristics by B/N doping in graphene for communication devices

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