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A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

  • Published:2017-10 Issue:10 Volume:64 Page:4302-4309
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Aguirre-Morales Jorge-DanielORCID,Fregonese Sebastien,Mukherjee ChhandakORCID,Wei Wei,Happy Henri,Maneux Cristell,Zimmer Thomas

Funder

European Commission through the Seventh Framework Program for Research and Technological Development

French National Research Agency through the P2N “GRACY” project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 21 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Scalable Compact Model for the Static Drain Current of Graphene FETs;IEEE Transactions on Electron Devices;2024-01

2. Modelling the Quantum Capacitance of Single-layer and Bilayer Graphene;Materials Science;2023-11-23

3. Graphene field-effect transistor TCAD tool for circuit design under freeware;2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD);2023-07-03

4. An Electromechanical Compact Model for Radio Frequency Flexible Graphene Field-Effect Transistor;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

5. Extending the Small-Signal Modeling of GFETs to Ambipolarity Regime;2023 14th Spanish Conference on Electron Devices (CDE);2023-06-06
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