Investigation of Temperature Dependence of mmWave Power Amplifier Large-Signal Reliability Performance-Reference-Cited by-同舟云学术

Investigation of Temperature Dependence of mmWave Power Amplifier Large-Signal Reliability Performance

Published:2023-03 Issue:3 Volume:70 Page:928-933
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rathi Aarti¹^ORCID,Srinivasan Purushothaman²^ORCID,Guarin Fernando²,Dixit Abhisek¹^ORCID

Affiliation:

1. Department of Electrical Engineering, IIT Delhi, New Delhi, India

2. GlobalFoundries, Malta, NY, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10012323.pdf?arnumber=10012323

Reference26 articles.

1. Hot carrier effect on CMOS RF amplifiers;xiao;Proc IEEE Int Rel Phys Symp Proceedings 43rd Annual,2005

2. MOSFET Degradation Under RF Stress

3. 60 GHz highly reliable power amplifier with 13dBm Psat 15% peak PAE in 65 nm CMOS technology;moret;Proc Silicon Monolithic Integrated Circuits in RF Systems Topical Meeting,2015

4. Excellent 22FDX Hot-Carrier Reliability for PA Applications

5. MOSFET degradation dependence on input signal power in a RF power amplifier

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Memory effects in 45-nm PDSOI MOSFETs at Cryogenic Temperatures for Quantum Computing Applications;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. RC-Effects on the Oxide of SOI MOSFET under Off-State TDDB Degradation: RF Characterization and Modeling;Micromachines;2024-02-07

3. Temperature-Dependent Study of Large-Signal Reliability of p-FET-Based Power Amplifier for mmWave Applications;IEEE Transactions on Device and Materials Reliability;2023-09