MOSFET degradation dependence on input signal power in a RF power amplifier

Author:

Crespo-Yepes A.,Barajas E.,Martin-Martinez J.,Mateo D.,Aragones X.,Rodriguez R.,Nafria M.

Funder

MINECO

ERDF

Generalitat de Catalunya

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Technology scaling and reliability: challenges and opportunities;Huard,2015

2. Hot-carrier stress effect on a CMOS 65nm 60GHz one-stage power amplifier;Quémerais;IEEE Electron Device Lett.,2010

3. DC and RF degradation induced by high RF power stresses in 0.18-μm nMOSFETs;Liu;IEEE Trans. Device Mater. Reliab.,2010

4. Degradation mechanisms in CMOS power amplifiers subject to radio-frequency stress and comparison to the DC case;Presti,2007

5. A new synthesis methodology for reliable RF front-end design;Ferreira,2011

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