Drain Current Drop in Oxide Semiconductor Thin-Film Transistors: The Mechanisms and a Solution-Reference-Cited by-同舟云学术

Drain Current Drop in Oxide Semiconductor Thin-Film Transistors: The Mechanisms and a Solution

Published:2022-05 Issue:5 Volume:69 Page:2430-2435
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Chen Guowei¹^ORCID,Guo Min¹,Li Xiaojie¹,Wang Weiliang²^ORCID,Liu Fengjuan³,Ning Ce³,Yuan Guangcai³,Chen Jun¹^ORCID,Deng Shaozhi¹^ORCID,Liu Chuan¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

2. Guangdong Province Key Laboratory of Display Material and Technology, School of Physics, Sun Yat-sen University, Guangzhou, China

3. BOE Technology Group Company, Ltd., Beijing, China

Funder

National Science and Technology Major Project of the Ministry of Science and Technology of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09756649.pdf?arnumber=9756649

Reference34 articles.

1. High-Performance Drain-Offset a-IGZO Thin-Film Transistors

2. How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates and Transistor–Diode Hybrid Integration

3. AlGaN/GaN hybrid MOS-HEMT analytical mobility model

4. Offset Drain ZnO Thin-Film Transistors for High-Voltage Operation

5. A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process

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