A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process-Reference-Cited by-同舟云学术

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A Short-Channel TFT of Amorphous In–Ga–Zn–O Semiconductor Pixel Structure With Advanced Five-Mask Process

Published:2014-10 Issue:10 Volume:35 Page:1043-1045
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Joon-Young Yang ,Sung-Hoon Jung ,Chang-Seung Woo ,Ju-Hyun Lee ,Jung-Ho Park ,Myung-Chul Jun ,In-Byeong Kang ,Sang-Deog Yeo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6908043/06895293.pdf?arnumber=6895293

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modulating Electrical Characteristics of ZnO Thin-Film Transistors by Scaling Down Gate Dielectric Thickness;IEEE Transactions on Electron Devices;2024-02

2. Suppressing Undesired Channel Length‐Dependent Electrical Characteristics of Fully Integrated InGaZnO Thin‐Film Transistors via Defect Control Layer;Advanced Electronic Materials;2022-11-10

3. Oxide thin-film transistors based on i-line stepper process for high PPI displays;Journal of Information Display;2022-11-02

4. Drain Current Drop in Oxide Semiconductor Thin-Film Transistors: The Mechanisms and a Solution;IEEE Transactions on Electron Devices;2022-05

5. Indium–gallium–zinc–oxide thin-film transistors: Materials, devices, and applications;Journal of Semiconductors;2021-03-01

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