AlGaN/GaN hybrid MOS-HEMT analytical mobility model-Reference-Cited by-同舟云学术

AlGaN/GaN hybrid MOS-HEMT analytical mobility model

Published:2011-02 Issue:1 Volume:56 Page:201-206
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Pérez-Tomás A.,Fontserè A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Ikeda N, Kaya S, Li J, Sato Y, Kato S, Yoshida S. In: Proceedings of the international symposium power devices and ICs, ISPSD’2008; 2008. p. 287–90.

2. Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

3. Wu Y-F, Moore M, Wisleder T, Saxler A, Parikh P. In: Proceedings of the IEEE device research conference; 2006. p. 151–2.

4. Huang W, Chow TP, Niiyama Y, Nomura T, Yoshida S. In: Proceedings of the international symposium on power devices and ICs, ISPSD’2008; 2008. p. 291–4.

5. Tang K, Li Z, Chow TP, Niiyama Y, Nomura T, Yoshida S. In: Proceedings of ISPSD 2009, Barcelona, Spain; 2009. p. 279–82.

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